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1

LP-MOCVD grown GaInP/GaAs HBTs for VCOs and power amplifier MMICs

M.A. di Forte-Poisson, C. Brylinski, S.L. Delage, H. Blanck, D. Floriot, S. Cassette, E. Chartier, D. Pons

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 177 KB

english, 1994

2

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

K. Čičo, D. Gregušová, J. Kuzmík, M. Jurkovič, A. Alexewicz, M.-A. di Forte Poisson, D. Pogany, G. Strasser, S. Delage, K. Fröhlich

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 562 KB

english, 2012

3

GaInP/GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposition for voltage-controlled oscillators and power amplifier microwave monolithic integrated circuits

M.A. di Forte-Poisson, C. Brylinski, S.L. Delage, H. Blanck, D. Floriot, S. Cassette, E. Chartier, D. Pons, A. Huber

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 1.72 MB

english, 1994

4

LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

M.-A. di Forte Poisson, N. Sarazin, M. Magis, M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. Georgakilas, P. Kominou, M. Guziewicz, E. Kaminska, A. Piotrowska, C. Gaquière, M. Oualli, E. Char

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 849 KB

english, 2010

5

[IEEE 2014 Lester Eastman Conference on High Performance Devices (LEC) - Ithaca, NY, USA (2014.8.5-2014.8.7)] 2014 Lester Eastman Conference on High Performance Devices (LEC) - S3-P11: Thin-film coatings for improved thermal performances of GaN-based HEMTs

Aubry, R., Michel, N., Jacquet, J. C., Baczkowski, L., Patard, O., Chartier, E., Lancereau, D., Bohbot, S., Di Forte Poisson, M. A., Oualli, M., Piotrowicz, S., Delage, S. L., Djouadi, A., Scudeller,

Year:

2014

Language:

english

File:

PDF, 1.14 MB

english, 2014

6

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Bisi, D., Stocco, A., Rossetto, I., Meneghini, M., Rampazzo, F., Chini, A., Soci, F., Pantellini, A., Lanzieri, C., Gamarra, P., Lacam, C., Tordjman, M., di Forte-Poisson, M.-A., De Salvador, D., Bazz

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 469 KB

english, 2015

7

Two-dimensional magnetophonon resonance in GaInAs-InP and GaInAs-AlInAs heterojunctions and superlattices

J.C. Portal, G. Gregoris, M.A. Brummell, R.J. Nicholas, M. Razeghi, M.A. Di Forte-Poisson, K.Y. Cheng, A.Y. Cho

Journal:

Surface Science

Year:

1984

Language:

english

File:

PDF, 334 KB

english, 1984

8

Two-dimensional magnetophonon resonance in GaInAs-InP and GaInAs-AlInAs heterojunctions and superlattices

J.C. Portal, J.C. Portal, G. Gregoris, M.A. Brummell, R.J. Nicholas, M. Razeghi, M.A. Di Forte-Poisson, K.Y. Cheng, A.Y. Cho

Journal:

Surface Science Letters

Year:

1984

Language:

english

File:

PDF, 39 KB

english, 1984

9

Fundamentals and practice of metal contacts to wide band gap semiconductor devices

M. A. Borysiewicz, E. Kamińska, M. Myśliwiec, M. Wzorek, A. Kuchuk, A. Barcz, E. Dynowska, M.-A. di Forte-Poisson, C. Giesen, A. Piotrowska

Journal:

Crystal Research and Technology

Year:

2012

Language:

english

File:

PDF, 1.06 MB

english, 2012

10

[IEEE 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - La Jolla, CA, USA (2012.10.14-2012.10.17)] 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - 160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management

Piotrowicz, S., Jardel, O., Jacquet, J.-C., Lancereau, D., Aubry, R., Morvan, E., Sarazin, N., Dufraisse, J., Dua, C., Oualli, M., Chartier, E., Poisson, M. A. Di-Forte, Gaquière, C., Delage, S. L.

Year:

2012

Language:

english

File:

PDF, 488 KB

english, 2012

11

Magnetophonon resonance in n + n - n + InP up to 40 T

Yamada, K, Miura, N, Eaves, L, Portal, J C, Forte-Poisson, M A di, Brylinski, C

Journal:

Semiconductor Science and Technology

Year:

1988

Language:

english

File:

PDF, 571 KB

english, 1988

12

Two-dimensional persistent photoconductivity and magnetic freeze-out in lightly “δ”-doped InP

D. Lavielle, J.C. Portal, M.A. di Forte-Poisson, C. Brylinksi, E. Blondeau

Journal:

Surface Science

Year:

1990

Language:

english

File:

PDF, 254 KB

english, 1990

13

[IEEE 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Waikoloa, HI, USA (2011.10.16-2011.10.19)] 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Development of InAlN/GaN HEMTs Power Devices in S-Band

Piotrowicz, S., Chartier, E., Jardel, O., Dufraisse, J., Callet, G., Jacquet, J.-C., Lancereau, D., Morvan, E., Aubry, R., Sarazin, N., Dua, C., Oualli, M., Di-Forte Poisson, M. A., Delage, S. L.

Year:

2011

Language:

english

File:

PDF, 302 KB

english, 2011

14

SPIE Proceedings [SPIE 1st Intl Conf on Idium Phosphide and Related Materials for Advanced Electronic and Optical Devices - Norman, OK (Monday 20 March 1989)] 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices - LP-MOCVD InP Gunn Diodes Developed For 94 Gift Millimeter Range Operation

di Forte-Poisson, M. A., Brylinski, C., Proust, N., Pons, D., Secoue, M., Henry, P. A., Calligaro, M., Lacombe, J., Messick, Louis J., Singh, Rajendra

Year:

1989

Language:

english

File:

PDF, 3.96 MB

english, 1989

15

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Jardel, Olivier, Callet, Guillaume, Dufraisse, Jérémy, Piazza, Michele, Sarazin, Nicolas, Chartier, Eric, Oualli, Mourad, Aubry, Raphaël, Reveyrand, Tibault, Jacquet, Jean-Claude, Di Forte Poisson, Ma

Journal:

International Journal of Microwave and Wireless Technologies

Year:

2011

Language:

english

File:

PDF, 472 KB

english, 2011

16

Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure

Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 575 KB

english, 2012

17

[IEEE 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012 - Montreal, QC, Canada (2012.06.17-2012.06.22)] 2012 IEEE/MTT-S International Microwave Symposium Digest - First demonstration of AlInN/GaN HEMTs amplifiers at K band

Jardel, O., Callet, G., Lancereau, D., Jacquet, J-C., Reveyrand, T., Sarazin, N., Aubry, R., Leger, S., Chartier, E., Oualli, M., Dua, C., Piotrowicz, S., Morvan, E., Di Forte Poisson, M.A., Delage, S

Year:

2012

Language:

english

File:

PDF, 688 KB

english, 2012

18

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs

Rossetto, I., Rampazzo, F., Meneghini, M., Silvestri, M., Dua, C., Gamarra, P., Aubry, R., di Forte-Poisson, M.-A., Patard, O., Delage, S.L., Meneghesso, G., Zanoni, E.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 921 KB

english, 2014

19

Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs

Rossetto, I., Rampazzo, F., Gerardin, S., Meneghini, M., Bagatin, M., Zanandrea, A., Dua, C., di Forte-Poisson, M.-A., Aubry, R., Oualli, M., Delage, S.L., Paccagnella, A., Meneghesso, G., Zanoni, E.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 795 KB

english, 2015

20

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Strain relaxation of Ga/sub 0.2/In/sub 0.8/As and InAs/sub 0.5/P/sub 0.5/ layers grown on InP substrate for 1.6 to 2.4 μm spectral range Ga/sub x/In/sub 1-x/As/InAs/sub y/P/sub 1-y//InP photodiodes application

Kae-Nune, P., di Forte-Poisson, M.A., Brylinski, C., di Persio, J.

Year:

1993

Language:

english

File:

PDF, 272 KB

english, 1993

21

Band offset of GaAs-GaInP heterojunctions

Feng, S L, Krynicki, J, Donchev, V, Bourgoin, J C, Forte-Poisson, M Di, Brylinski, C, Delage, S, Blanck, H, Alaya, S

Journal:

Semiconductor Science and Technology

Year:

1993

Language:

english

File:

PDF, 318 KB

english, 1993

22

Strain Distribution in GaN Hexagons Measured by Raman Spectroscopy

R. Seitz, T. Monteiro, E. Pereira, M. di Forte-Poisson

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 200 KB

english, 1999

23

Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy

M.A di Forte-Poisson, F Huet, A Romann, M Tordjman, D Lancefield, E Pereira, J Di Persio, B Pecz

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 244 KB

english, 1998

24

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Correlation between interfacial defects and electrical properties of LP-MOCVD GaInAs/InP heterostructures, application to high performance 1.67 μm GaInAs/InP PiN photodiodes

di Forte-Poisson, M.A., Brylinski, C., Herbeaux, C., Androussi, Y., Lefebvre, A., di Persio, J., Vassilakis, E., Herrbach, F., Carriere, C.

Year:

1993

Language:

english

File:

PDF, 542 KB

english, 1993

25

Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements

Aubry, R., Jacquet, J.-C., Dua, Christian, Gérard, H., Dessertenne, B., di Forte-Poisson, M.A., Cordier, Yvon, Delage, S.L.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 265 KB

english, 2004

26

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Naresh-Kumar, G., Vilalta-Clemente, A., Pandey, S., Skuridina, D., Behmenburg, H., Gamarra, P., Patriarche, G., Vickridge, I., di Forte-Poisson, M. A., Vogt, P., Kneissl, M., Morales, M., Ruterana, P.

Journal:

Year:

2014

Language:

english

File:

PDF, 9.58 MB

english, 2014

27

V-shaped defects connected to inversion domains in AlGaN layers

Pécz, B., Makkai, Zs., di Forte-Poisson, M. A., Huet, F., Dunin-Borkowski, R. E.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 681 KB

english, 2001

28

Low-pressure metalorganic chemical vapor deposition growth and characterization of δ-doped InP

M. A. Di Forte-poisson, C. Brylinski, E. Blondeau, D. Lavielle, J. C. Portal

Year:

1989

Language:

english

File:

PDF, 519 KB

english, 1989

29

Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices

Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, Splettstösser, Jörg, Schauwecker, Bernd, di Forte-Poisson, Marie-Antoinette

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 801 KB

english, 2015

30

Multilayer antidiffusion barrier schemes for Schottky and ohmic contact metallisations to InAlN/GaN HEMTs

Kamińska, Eliana, Pasternak, Iwona, Borysiewicz, Michał A., Guziewicz, Marek, Piotrowska, Anna, Dynowska, Elżbieta, Jakieła, Rafał, Kolkovski, Valery, di Forte-Poisson, Marie‑Antoinette

Journal:

MRS Proceedings

Year:

2011

Language:

english

File:

PDF, 266 KB

english, 2011

31

A new realisation of Schottky diodes on n-type InP

Gaonach, C, Cassette, S, Forte-Poisson, M A Di, Brylinski, C, Champagne, M, Tardella, A

Journal:

Semiconductor Science and Technology

Year:

1990

Language:

english

File:

PDF, 559 KB

english, 1990

32

High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

Medjdoub, Farid, Kabouche, Riad, Linge, Astrid, Grimbert, Bertrand, Zegaoui, Malek, Gamarra, Piero, Lacam, Cédric, Tordjman, Maurice, di Forte-Poisson, Marie-Antoinette

Journal:

Applied Physics Express

Year:

2015

Language:

english

File:

PDF, 1.52 MB

english, 2015

33

Ga1−xInxAs/InAsyP1−y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD

M.A. di Forte-Poisson, C. Brylinski, J. di Persio, X. Hugon, B. Vilotitch, C. Le Noble

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 625 KB

english, 1992

34

Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistor base layer

M.-A. di Forte-Poisson, S. Bernard, L. Teisseire, C. Brylinski, S. Cassette, J. di Persio

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 601 KB

english, 2000

35

AlGaN/GaN HEMT High Power Densities on $\hbox{SiC/} \hbox{SiO}_{2}$/poly-SiC Substrates

Defrance, N., Thorpe, J., Douvry, Y., Hoel, V., De Jaeger, J.C., Gaquiere, C., Xiao Tang,, di Forte-Poisson, M.A., Langer, R., Rousseau, M., Lahreche, H.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 240 KB

english, 2009

36

Erratum: “Deuterium passivation of electrically active defects in nonintentionally doped n-GaN” [Appl. Phys. Lett. 90, 072107 (2007)]

Mimila-Arroyo, J., Barbé, M., Jomard, F., Chevallier, J., di Forte-Poisson, M. A., Delage, S. L., Dua, C.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 281 KB

english, 2007

37

InAlN/GaN HEMTs based L-band high-power packaged amplifiers

Jardel, Olivier, Jacquet, Jean-Claude, Baczkowski, Lény, Carisetti, Dominique, Lancereau, Didier, Olivier, Maxime, Aubry, Raphaël, di Forte Poisson, Marie-Antoinette, Dua, Christian, Piotrowicz, Stéph

Journal:

International Journal of Microwave and Wireless Technologies

Year:

2014

Language:

english

File:

PDF, 850 KB

english, 2014

38

Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films

Vilalta-Clemente, A., Naresh-Kumar, G., Nouf-Allehiani, M., Gamarra, P., di Forte-Poisson, M.A., Trager-Cowan, C., Wilkinson, A.J.

Journal:

Acta Materialia

Year:

2017

Language:

english

File:

PDF, 3.22 MB

english, 2017

39

Structural characterisation of GaAlN/GaN HEMT heterostructures

N. Sarazin, O. Durand, M. Magis, M.-A. di Forte Poisson, J. Di Persio

Journal:

Applied Surface Science

Year:

2006

Language:

english

File:

PDF, 608 KB

english, 2006

40

Deuterium passivation of electrically active defects in nonintentionally doped n-GaN

Mimila-Arroyo, J., Barbé, M., Jomard, F., Chevallier, J., di Forte-Poisson, M. A., Delage, S. L., Dua., C.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 258 KB

english, 2007

41

Optoelectronic Devices: III Nitrides || MOCVD Growth of Group III Nitrides for High-power, High-frequency Applications

di Forte-Poisson, M.A.

Year:

2005

Language:

english

File:

PDF, 2.75 MB

english, 2005

42

Characterization of GaAlN/GaN Superlattice Heterostructures

Makkai, Zs., Pécz, Béla, di Forte-Poisson, M.A., Huet, F.

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 485 KB

2001

43

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Sarazin, N., Jardel, O., Morvan, E., Aubry, R., Laurent, M., Magis, M., Tordjman, M., Alloui, M., Drisse, O., Di Persio, J., di Forte Poisson, M.A., Delage, S.L., Vellas, N., Gaquière, C., Théron, D

Journal:

Electronics Letters

Year:

2007

Language:

english

File:

PDF, 134 KB

english, 2007

44

The microstructure and electrical properties of directly deposited TiN ohmic contacts to Gallium Nitride.

Ruterana, P., Nouet, G., Kehagias, Th., Komninou, Ph., Karakostas, Th., di Forte Poisson, M.A., Huet, F.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 1.67 MB

2000

45

Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC

B. Pécz, L. Tóth, M.A. di Forte-Poisson, J. Vacas

Journal:

Applied Surface Science

Year:

2003

Language:

english

File:

PDF, 151 KB

english, 2003

46

MOCVD growth of group III nitrides for high power, high frequency applications

M.-A. di Forte Poisson, M. Magis, M. Tordjman, N. Sarazin, J. di Persio

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 371 KB

english, 2005

47

Aluminium incorporation in AlxGa1 − xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

A. Redondo-Cubero, R. Gago, F. González-Posada, U. Kreissig, M.-A. di Forte Poisson, A.F. Braña, E. Muñoz

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 680 KB

english, 2008

48

LPMOCVD growth of GaN on silicon carbide

M.-A. di Forte-Poisson, A. Romann, M. Tordjman, M. Magis, J. Di Persio, Ch. Jacques, P. Vicente

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 367 KB

english, 2003

49

Cyclotron resonance and polaron effects in a two-dimensional electron gas in GaInAs

M.A. Brummell, R.J. Nicholas, L.C. Brunel, S. Huant, M. Baj, J.C. Portal, M. Razeghi, M.A. Di Forte-Poisson, K.Y. Cheng, A.Y. Cho

Journal:

Surface Science

Year:

1984

Language:

english

File:

PDF, 374 KB

english, 1984

50

LP-MOCVD growth of GaAlN/GaN heterostructures on Silicon Carbide. Application to HEMT's devices.

di Forte Poisson, M-A., Magis, M., Tordjman, M., Aubry, R., Peschang, M., Delage, S. L., di Persio, J., Grimbert, B., Hoel, V., Delos, E., Ducatteau, D., Gaquiere, C.

Journal:

MRS Proceedings

Year:

2003

Language:

english

File:

PDF, 891 KB

english, 2003

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